BSP19A - описание и поиск аналогов

 

BSP19A. Аналоги и основные параметры

Наименование производителя: BSP19A

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.8 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 70 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: SOT223 TO261

 Аналоги (замена) для BSP19A

- подборⓘ биполярного транзистора по параметрам

 

BSP19A даташит

 0.1. Size:119K  motorola
bsp19at bsp20a.pdfpdf_icon

BSP19A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSP19AT1/D BSP19AT1 NPN Silicon BSP20AT1 Epitaxial Transistor Motorola Preferred Devices This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications

 0.2. Size:100K  onsemi
nsvbsp19at1g.pdfpdf_icon

BSP19A

BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http //onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE High Voltage TRA

 0.3. Size:100K  onsemi
bsp19at1g.pdfpdf_icon

BSP19A

BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The http //onsemi.com device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE Features NPN SILICON HIGH VOLTAGE High Voltage TRA

 0.4. Size:181K  onsemi
bsp19at1.pdfpdf_icon

BSP19A

BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for http //onsemi.com medium power surface mount applications. Features SOT--223 PACKAGE High Voltage V(BR)CEO of 250 and 350 V NPN SILICON HIGH

Другие транзисторы: BCW33L, BCW65AL, BCW68GL, BCW70L, BCW72L, BCX17L, BCX19L, BDW47, D880, BSS64L, BSV52L, BUB323Z, BUD42D, BUL45, BUL45D2, CPH3105, CPH3106

 

 

 

 

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