CPH6001A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH6001A
Código: GA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5000 MHz
Capacitancia de salida (Cc): 0.95 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: CPH6
Búsqueda de reemplazo de CPH6001A
CPH6001A datasheet
cph6001a.pdf
Ordering number ENA1079 CPH6001A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise CPH6001A Amplifier Applications Features High gain S21e 2=11dB typ (f=1GHz). High cutoff frequency fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max). Specifications Absolute Maximum ... See More ⇒
cph6001.pdf
Ordering number ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =11dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2146A Small and slim 6-pin package. [CPH6001] Large allowable collector dissipation (800mW max). 0.15 2.9 6 5 4 0.05 1 2 ... See More ⇒
cph6003a.pdf
Ordering number ENA1078 CPH6003A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-frequency Medium-power Amplifier CPH6003A Applications Features High gain (fT=7GHz typ). High Current (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Sym... See More ⇒
cph6020.pdf
CPH6020 Ordering number ENA1548 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6020 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain 2 S21e =13.5dB typ (f=1GHz). Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditi... See More ⇒
Otros transistores... CPH3216 , CPH3223 , CPH3240 , CPH3245 , CPH5504 , CPH5506 , CPH5517 , CPH5524 , TIP120 , CPH6003A , CPH6020 , CPH6021 , CPH6121 , CPH6122 , CPH6123 , CPH6153 , CPH6223 .
History: 3DG8050A
History: 3DG8050A
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