CPH6001A - описание и поиск аналогов

Ordering number ENA1079 CPH6001A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise CPH6001A Amplifier Applications Features High gain S21e 2=11dB typ (f=1GHz). High cutoff frequency fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max). Specifications Absolute Maximum

Ordering number ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =11dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2146A Small and slim 6-pin package. [CPH6001] Large allowable collector dissipation (800mW max). 0.15 2.9 6 5 4 0.05 1 2

Ordering number ENA1078 CPH6003A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-frequency Medium-power Amplifier CPH6003A Applications Features High gain (fT=7GHz typ). High Current (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Sym

CPH6020 Ordering number ENA1548 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6020 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain 2 S21e =13.5dB typ (f=1GHz). Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditi

CPH6021 Ordering number ENA1910 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor CPH6021 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =14dB typ (f=1GHz) Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings