CPH6153 Todos los transistores

 

CPH6153 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CPH6153

Código: TC

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.3 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: CPH6

Búsqueda de reemplazo de transistor bipolar CPH6153

 

CPH6153 Datasheet (PDF)

1.1. cph6153.pdf Size:255K _sanyo

CPH6153
CPH6153

CPH6153 Ordering number : ENA1606 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor CPH6153 Load Switch Applications Applications • Load switch, DC-DC converter, motor drivers, charger. Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package

5.1. cph6123 cph6223.pdf Size:55K _sanyo

CPH6153
CPH6153

Ordering number : ENN7386 CPH6123 / CPH6223 PNP / NPN Epitaxial Planar Silicon Transistors CPH6123 / CPH6223 High-Current Switching Applications Applications Package Dimensions • DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobe. 2146A [CPH6123 / CPH6223] 0.15 2.9 Features 5 6 4 • Adoption of MBIT process. 0.05 • High current capacitance. • L

5.2. cph6103 cph6203.pdf Size:187K _sanyo

CPH6153
CPH6153

Ordering number:ENN5807 PNP/NPN Epitaxial Planar Silicon Transistors CPH6103/CPH6203 High-Current Switching Applications Applications Package Dimensions · DC-DC converter, relay drivers, lamp drivers, motor unit:mm drivers, strobes. 2146A [CPH6103/6203] Features 0.15 2.9 · Adoption of FBET, MBIT processes. 5 6 4 · High current capacitance. · Low collector-to-emitter sat

 5.3. cph6121.pdf Size:47K _sanyo

CPH6153
CPH6153

Ordering number : ENN7260 CPH6121 PNP Epitaxial Planar Silicon Transistor CPH6121 DC / DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2146A Features [CPH6121] 0.15 2.9 • Adoption of MBIT process. 6 5 4 • High current capacitance. • Low collector-to-emitter saturation voltage. 0.05 • High spe

5.4. cph6104 cph6204.pdf Size:212K _sanyo

CPH6153
CPH6153

Ordering number:ENN5808 PNP/NPN Epitaxial Planar Silicon Transistors CPH6104/CPH6204 High-Current Switching Applications Applications Package Dimensions · DC-DC converter, relay drivers, lamp drivers, motor unit:mm drivers, strobes. 2146A [CPH6104/6204] Features 0.15 2.9 · Adoption of FBET, MBIT processes. 5 6 4 · High current capacitance. · Low collector-to-emitter sat

 5.5. cph6122.pdf Size:48K _sanyo

CPH6153
CPH6153

Ordering number : EN7225A CPH6122 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor CPH6122 DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package fac

5.6. cph6101 cph6201.pdf Size:163K _sanyo

CPH6153
CPH6153

Ordering number:ENN5809 PNP/NPN Epitaxial Planar Silicon Transistors CPH6101/CPH6201 High-Current Switching Applications Applications Package Dimensions · DC-DC converter, relay drivers, lamp drivers, motor unit:mm drivers, strobes. 2146A [CPH6101/6201] Features 0.15 2.9 · Adoption of FBET, MBIT processes. 6 5 4 · High current capacitance. · Low collector-to-emitter satu

5.7. cph6102 cph6202.pdf Size:199K _sanyo

CPH6153
CPH6153

Ordering number:ENN5810 PNP/NPN Epitaxial Planar Silicon Transistors CPH6102/CPH6202 High-Current Switching Applications Applications Package Dimensions · DC-DC converter, relay drivers, lamp drivers, motor unit:mm drivers, strobes. 2146A [CPH6102/6202] Features 0.15 2.9 · Adoption of FBET, MBIT processes. 5 6 4 · High current capacitance. · Low collector-to-emitter sat

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