DTA114TE
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114TE
Código: 94_6E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SC75
SOT416
Búsqueda de reemplazo de transistor bipolar DTA114TE
DTA114TE
Datasheet (PDF)
..1. Size:56K rohm
dta114te.pdf
TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing
..2. Size:183K mcc
dta114te.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth DTA114TEMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPNP Digital Transistor Moisure Sensitivity Level 1 Built-in b
..3. Size:729K htsemi
dta114tca dta114te dta114tsa dta114tua.pdf
DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasi
..4. Size:294K willas
dta114te.pdf
FM120-M WILLASDTA114TE THRUPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board space
0.1. Size:29K motorola
pdta114te sot416.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
0.2. Size:52K motorola
pdta114te 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
0.3. Size:52K philips
pdta114te 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
0.4. Size:1464K rohm
dta114teb dta114tefra dta114tkafra dta114tmfha dta114tuafra dta114tub.pdf
DTA114T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-100mA R110kDTA114TM DTA114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB
0.5. Size:57K rohm
dta114te-tua-tka 94 sot416 323 346.pdf
TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing
0.6. Size:226K diodes
ddta113te ddta123te ddta143te ddta114te ddta124te ddta144te ddta115te ddta125te.pdf
DDTA (R1-ONLY SERIES) EDDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B CTOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22Mecha
0.7. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.8. Size:770K lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
0.10. Size:117K chenmko
chdta114tegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA114TEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.0.10.20.05* H
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