Справочник транзисторов. DTA114TE

 

Биполярный транзистор DTA114TE - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTA114TE
   Маркировка: 94_6E
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SC75 SOT416

 Аналоги (замена) для DTA114TE

 

 

DTA114TE Datasheet (PDF)

 ..1. Size:56K  rohm
dta114te.pdf

DTA114TE
DTA114TE

TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing

 ..2. Size:183K  mcc
dta114te.pdf

DTA114TE
DTA114TE

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth DTA114TEMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPNP Digital Transistor Moisure Sensitivity Level 1 Built-in b

 ..3. Size:729K  htsemi
dta114tca dta114te dta114tsa dta114tua.pdf

DTA114TE
DTA114TE

DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasi

 ..4. Size:294K  willas
dta114te.pdf

DTA114TE
DTA114TE

FM120-M WILLASDTA114TE THRUPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board space

 0.1. Size:29K  motorola
pdta114te sot416.pdf

DTA114TE
DTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 0.2. Size:52K  motorola
pdta114te 2.pdf

DTA114TE
DTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 0.3. Size:52K  philips
pdta114te 2.pdf

DTA114TE
DTA114TE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

 0.4. Size:1464K  rohm
dta114teb dta114tefra dta114tkafra dta114tmfha dta114tuafra dta114tub.pdf

DTA114TE
DTA114TE

DTA114T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-100mA R110kDTA114TM DTA114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB

 0.5. Size:57K  rohm
dta114te-tua-tka 94 sot416 323 346.pdf

DTA114TE
DTA114TE

TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing

 0.6. Size:226K  diodes
ddta113te ddta123te ddta143te ddta114te ddta124te ddta144te ddta115te ddta125te.pdf

DTA114TE
DTA114TE

DDTA (R1-ONLY SERIES) EDDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B CTOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22Mecha

 0.7. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf

DTA114TE
DTA114TE

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.8. Size:770K  lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf

DTA114TE
DTA114TE

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

 0.9. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf

DTA114TE
DTA114TE

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 0.10. Size:117K  chenmko
chdta114tegp.pdf

DTA114TE
DTA114TE

CHENMKO ENTERPRISE CO.,LTDCHDTA114TEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.0.10.20.05* H

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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