DTC124XE Todos los transistores

 ..1. Size:626K  rohm
 dtc124xe.pdf

DTC124X series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 22kW DTC124XM DTC124XE R2 (SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3 OUT lFeatures OUT 1) Built-In Biasing Resistors IN IN 2) Built-in bias resistors enable the configuration

 0.1. Size:54K  motorola
 pdtc124xef 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

 0.2. Size:55K  motorola
 pdtc124xe 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage

 0.3. Size:54K  philips
 pdtc124xef 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha

 0.4. Size:55K  philips
 pdtc124xe 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage

 0.5. Size:138K  nxp
 pdtc124xef pdtc124xk pdtc124xs.pdf

PDTC124X series NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 07 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC124XE SOT416 SC-75 - PDTA124XE PDTC124XEF SOT490 SC-89 - PDTA124XEF PDTC124XK SOT346 SC-59

 0.6. Size:69K  rohm
 dtc124xe-xua-xka 45 sot416 323 346.pdf

Transistors Digital transistors (built-in resistors) DTC124XE / DTC124XUA / DTC124XKA DTC124XSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias

 0.7. Size:2061K  rohm
 dtc124xefra dtc124xkafra dtc124xmfha dtc124xuafra.pdf

DTC124X series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC 50V IC(MAX.) 100mA R1 22k DTC124XMFHA DTC124XEFRA DTC124XM DTC124XE R2 (SC-105AA) SOT-416(SC-75A) 47k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias re

 0.8. Size:237K  diodes
 ddtc124xe.pdf

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60

 0.9. Size:144K  onsemi
 dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 0.10. Size:160K  chenmko
 chdtc124xegp.pdf

CHENMKO ENTERPRISE CO.,LTD CHDTC124XEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation