EMX2DXV6 Todos los transistores

 

EMX2DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMX2DXV6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.357 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT563
 

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EMX2DXV6 Datasheet (PDF)

 0.1. Size:121K  onsemi
 emx2dxv6t5g.pdf pdf_icon

EMX2DXV6

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 0.2. Size:121K  onsemi
 emx2dxv6t5-d.pdf pdf_icon

EMX2DXV6

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 0.3. Size:165K  onsemi
 emx2dxv6t5.pdf pdf_icon

EMX2DXV6

DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2

Otros transistores... EC4H09C , ECH8501 , EMD4DXV6 , EMF18 , EMF5XV6T5 , EMG2DXV5 , EMG5DXV5 , EMX1 , S9014 , EMZ1 , FH102A , HN1B01FDW1 , IMH20TR1 , MBT2222ADW1T1 , MBT35200 , MBT3904DW1 , MBT3906DW1 .

 

 
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