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EMX2DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMX2DXV6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.357 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT563

 Búsqueda de reemplazo de transistor bipolar EMX2DXV6

 

EMX2DXV6 Datasheet (PDF)

 0.1. Size:121K  onsemi
emx2dxv6t5g.pdf

EMX2DXV6 EMX2DXV6

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 0.2. Size:121K  onsemi
emx2dxv6t5-d.pdf

EMX2DXV6 EMX2DXV6

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 0.3. Size:165K  onsemi
emx2dxv6t5.pdf

EMX2DXV6 EMX2DXV6

DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2

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