EMX2DXV6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMX2DXV6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT563
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EMX2DXV6 datasheet
emx2dxv6t5g.pdf
EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig
emx2dxv6t5-d.pdf
EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig
emx2dxv6t5.pdf
DATA SHEET www.onsemi.com Dual NPN General Purpose DUAL NPN GENERAL PURPOSE AMPLIFIER Amplifier Transistor TRANSISTORS SURFACE MOUNT EMX2DXV6T5 This NPN transistor is designed for general purpose amplifier (3) (2) (1) applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features Q2
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