EMX2DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMX2DXV6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT563
Búsqueda de reemplazo de transistor bipolar EMX2DXV6
EMX2DXV6 Datasheet (PDF)
emx2dxv6t5g.pdf
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EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5-d.pdf
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EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5.pdf
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DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2
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