EMX2DXV6 Datasheet and Replacement
Type Designator: EMX2DXV6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.357 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT563
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EMX2DXV6 Datasheet (PDF)
emx2dxv6t5g.pdf

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5-d.pdf

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5.pdf

DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2134 | OC81DM | BSS61 | NSS1C301E | BSR32 | 2SA1391R | 2SC3509
Keywords - EMX2DXV6 transistor datasheet
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History: 2SD2134 | OC81DM | BSS61 | NSS1C301E | BSR32 | 2SA1391R | 2SC3509



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