EMX2DXV6 Specs and Replacement
Type Designator: EMX2DXV6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.357 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT563
EMX2DXV6 Substitution
- BJT ⓘ Cross-Reference Search
EMX2DXV6 datasheet
EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig... See More ⇒
EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig... See More ⇒
DATA SHEET www.onsemi.com Dual NPN General Purpose DUAL NPN GENERAL PURPOSE AMPLIFIER Amplifier Transistor TRANSISTORS SURFACE MOUNT EMX2DXV6T5 This NPN transistor is designed for general purpose amplifier (3) (2) (1) applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features Q2... See More ⇒
Detailed specifications: EC4H09C, ECH8501, EMD4DXV6, EMF18, EMF5XV6T5, EMG2DXV5, EMG5DXV5, EMX1, 2SC2073, EMZ1, FH102A, HN1B01FDW1, IMH20TR1, MBT2222ADW1T1, MBT35200, MBT3904DW1, MBT3906DW1
Keywords - EMX2DXV6 pdf specs
EMX2DXV6 cross reference
EMX2DXV6 equivalent finder
EMX2DXV6 pdf lookup
EMX2DXV6 substitution
EMX2DXV6 replacement
