MBT2222ADW1T1. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MBT2222ADW1T1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT2222ADW1T1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 0.6 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SC-88 SC-70 SOT-363

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MBT2222ADW1T1 datasheet

..1. Size:164K onsemi
mbt2222adw1t1.pdf pdf_icon

MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur

0.1. Size:160K onsemi
mbt2222adw1t1g.pdf pdf_icon

0.2. Size:341K willas
mmbt2222adw1t1.pdf pdf_icon

FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o

0.3. Size:250K lrc
lmbt2222adw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-

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MBT2222ADW1T1 Todos los transistores