Справочник транзисторов. MBT2222ADW1T1

 

Биполярный транзистор MBT2222ADW1T1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MBT2222ADW1T1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SC-88 SC-70 SOT-363

 Аналоги (замена) для MBT2222ADW1T1

 

 

MBT2222ADW1T1 Datasheet (PDF)

 ..1. Size:164K  onsemi
mbt2222adw1t1.pdf

MBT2222ADW1T1
MBT2222ADW1T1

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

 0.1. Size:160K  onsemi
mbt2222adw1t1g.pdf

MBT2222ADW1T1
MBT2222ADW1T1

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

 0.2. Size:341K  willas
mmbt2222adw1t1.pdf

MBT2222ADW1T1
MBT2222ADW1T1

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

 0.3. Size:250K  lrc
lmbt2222adw1t1g.pdf

MBT2222ADW1T1
MBT2222ADW1T1

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

 0.4. Size:250K  lrc
lmbt2222adw1t1g lmbt2222adw1t3g.pdf

MBT2222ADW1T1
MBT2222ADW1T1

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

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