MCH4020
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH4020
Código: GT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 8
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 13000
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: MCPH4
Búsqueda de reemplazo de transistor bipolar MCH4020
MCH4020
Datasheet (PDF)
..1. Size:283K sanyo
mch4020.pdf 
MCH4020Ordering number : ENA1280SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4020High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
..2. Size:368K onsemi
mch4020.pdf
Ordering number : ENA1280AMCH4020RF Transistorhttp://onsemi.com8V, 150mA, fT=16GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : S21e =17.5dB typ (f=1GHz) | |2 Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
8.1. Size:283K sanyo
mch4021.pdf
MCH4021Ordering number : ENA1281SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4021High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
9.1. Size:40K sanyo
mch4013.pdf
Ordering number : ENA1268 MCH4013SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4013and OSC ApplicationsFeatures High cut-off frequency : fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition
9.2. Size:368K sanyo
mch4016.pdf
MCH4016Ordering number : ENA1922SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4016High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.3. Size:368K sanyo
mch4017.pdf
MCH4017Ordering number : ENA1912SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4017High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.4. Size:368K sanyo
mch4015.pdf
MCH4015Ordering number : ENA1911SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4015High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.5. Size:66K sanyo
mch4009.pdf
Ordering number : ENA0389 MCH4009SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4009and OSC ApplicationsFeatures Low-noise use : NF=1.1dB typ (f=2GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratin
9.6. Size:369K sanyo
mch4014.pdf
MCH4014Ordering number : ENA1921SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4014High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.7. Size:296K onsemi
mch4016.pdf
Ordering number : ENA1922MCH4016RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
9.8. Size:297K onsemi
mch4017.pdf
Ordering number : ENA1912MCH4017RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
9.9. Size:294K onsemi
mch4015.pdf
Ordering number : ENA1911MCH4015RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
9.10. Size:307K onsemi
mch4014.pdf
Ordering number : ENA1921AMCH4014RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
