MCH4020. Аналоги и основные параметры
Наименование производителя: MCH4020
Маркировка: GT
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 8 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 13000 MHz
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: MCPH4
Аналоги (замена) для MCH4020
- подборⓘ биполярного транзистора по параметрам
MCH4020 даташит
..1. Size:283K sanyo
mch4020.pdf 
MCH4020 Ordering number ENA1280 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4020 High Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain S21e =17.5dB typ (f=1GHz). 2 Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions
..2. Size:368K onsemi
mch4020.pdf 
Ordering number ENA1280A MCH4020 RF Transistor http //onsemi.com 8V, 150mA, fT=16GHz, NPN Single MCPH4 Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=16GHz typ (VCE=5V) High gain S21e =17.5dB typ (f=1GHz) 2 Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collect
8.1. Size:283K sanyo
mch4021.pdf 
MCH4021 Ordering number ENA1281 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4021 High Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain S21e =17.5dB typ (f=1GHz). 2 Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions
9.1. Size:40K sanyo
mch4013.pdf 
Ordering number ENA1268 MCH4013 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier MCH4013 and OSC Applications Features High cut-off frequency fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=16dB typ (f=2GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condition
9.2. Size:368K sanyo
mch4016.pdf 
MCH4016 Ordering number ENA1922 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4016 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =18dB typ (f=1GHz) Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings
9.3. Size:368K sanyo
mch4017.pdf 
MCH4017 Ordering number ENA1912 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4017 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =17dB typ (f=1GHz) Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings
9.4. Size:368K sanyo
mch4015.pdf 
MCH4015 Ordering number ENA1911 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4015 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =17dB typ (f=1GHz) Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings
9.5. Size:66K sanyo
mch4009.pdf 
Ordering number ENA0389 MCH4009 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier MCH4009 and OSC Applications Features Low-noise use NF=1.1dB typ (f=2GHz). High cut-off frequency fT=25GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=17dB typ (f=2GHz). Specifications Absolute Maximum Ratin
9.6. Size:369K sanyo
mch4014.pdf 
MCH4014 Ordering number ENA1921 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4014 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =18dB typ (f=1GHz) Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings
9.7. Size:296K onsemi
mch4016.pdf 
Ordering number ENA1922 MCH4016 RF Transistor http //onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =18dB typ (f=1GHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collect
9.8. Size:297K onsemi
mch4017.pdf 
Ordering number ENA1912 MCH4017 RF Transistor http //onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =17dB typ (f=1GHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collec
9.9. Size:294K onsemi
mch4015.pdf 
Ordering number ENA1911 MCH4015 RF Transistor http //onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =17dB typ (f=1GHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collec
9.10. Size:307K onsemi
mch4014.pdf 
Ordering number ENA1921A MCH4014 RF Transistor http //onsemi.com 12V, 30mA, fT=10GHz NPN Single MCPH4 Features Low-noise use NF=1.2dB typ (f=1GHz) High cut-off frequency fT=10GHz typ (VCE=5V) High gain 2 S21e =18dB typ (f=1GHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collect
Другие транзисторы: MBT3946DW1T1, MBT6429DW1, MCH3007, MCH4009, MCH4014, MCH4015, MCH4016, MCH4017, TIP31, MCH4021, MCH5541, MCH6001, MCH6102, MCH6202, MCH6541, MCH6542, MCH6544
