MCH4021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCH4021Ordering number : ENA1281SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4021High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions

MCH4020Ordering number : ENA1280SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4020High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions

Ordering number : ENA1280AMCH4020RF Transistorhttp://onsemi.com8V, 150mA, fT=16GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : S21e =17.5dB typ (f=1GHz) | |2 Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect

Ordering number : ENA1268 MCH4013SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4013and OSC ApplicationsFeatures High cut-off frequency : fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition

MCH4016Ordering number : ENA1922SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4016High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings

MCH4017Ordering number : ENA1912SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4017High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings

MCH4015Ordering number : ENA1911SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4015High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings

Ordering number : ENA0389 MCH4009SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4009and OSC ApplicationsFeatures Low-noise use : NF=1.1dB typ (f=2GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratin

MCH4014Ordering number : ENA1921SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4014High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings

Ordering number : ENA1922MCH4016RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect

Ordering number : ENA1912MCH4017RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec

Ordering number : ENA1911MCH4015RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec

Ordering number : ENA1921AMCH4014RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect