MCH4021 Datasheet and Replacement
Type Designator: MCH4021
SMD Transistor Code: GL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 8
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 13000
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: MCPH4
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MCH4021 Datasheet (PDF)
..1. Size:283K sanyo
mch4021.pdf 

MCH4021Ordering number : ENA1281SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4021High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
8.1. Size:283K sanyo
mch4020.pdf 

MCH4020Ordering number : ENA1280SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4020High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
8.2. Size:368K onsemi
mch4020.pdf 

Ordering number : ENA1280AMCH4020RF Transistorhttp://onsemi.com8V, 150mA, fT=16GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : S21e =17.5dB typ (f=1GHz) | |2 Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
9.1. Size:40K sanyo
mch4013.pdf 

Ordering number : ENA1268 MCH4013SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4013and OSC ApplicationsFeatures High cut-off frequency : fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition
9.2. Size:368K sanyo
mch4016.pdf 

MCH4016Ordering number : ENA1922SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4016High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.3. Size:368K sanyo
mch4017.pdf 

MCH4017Ordering number : ENA1912SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4017High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.4. Size:368K sanyo
mch4015.pdf 

MCH4015Ordering number : ENA1911SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4015High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.5. Size:66K sanyo
mch4009.pdf 

Ordering number : ENA0389 MCH4009SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4009and OSC ApplicationsFeatures Low-noise use : NF=1.1dB typ (f=2GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratin
9.6. Size:369K sanyo
mch4014.pdf 

MCH4014Ordering number : ENA1921SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4014High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
9.7. Size:296K onsemi
mch4016.pdf 

Ordering number : ENA1922MCH4016RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
9.8. Size:297K onsemi
mch4017.pdf 

Ordering number : ENA1912MCH4017RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
9.9. Size:294K onsemi
mch4015.pdf 

Ordering number : ENA1911MCH4015RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
9.10. Size:307K onsemi
mch4014.pdf 

Ordering number : ENA1921AMCH4014RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
Datasheet: 2N3200
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History: 2SD2134
| BCX50
| CPH5901
| NSS1C301E
| K2102B
| HSE839
| BF502S
Keywords - MCH4021 transistor datasheet
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