MJL21193 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby MJL21193/DSEMICONDUCTOR TECHNICAL DATAPNPMJL21193*NPNSilicon Power Transistors*MJL21194The MJL21193 and MJL21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications. 16 AMPERECOMPLEMENTARY Total Harmonic Distortion Char

MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea

Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN-P

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194APPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL

isc Silicon PNP Power Transistor MJL21193DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= -250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear ap

MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea

MJL21195, MJL21196Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 A COMPLEMENTARY Excellent Gain Linearity

MJL21195, MJL21196Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 A COMPLEMENTARY Excellent Gain Linearity

MJL21195 (PNP),MJL21196 (NPN)Silicon Power TransistorsThe MJL21195 and MJL21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 A COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linearity

MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERE COMPLEMENTARY High DC Current GainSILICON POWER Excellent Gain Linea

MJL21196Transistor Silicon NPN Triple Diffused TypeMJL21196Power Amplifier Applications Complementary to MJL21195 High collector voltage:VCEO=250V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature,

MJL21195Transistor Silicon PNP Epitaxial TypeMJL21195Power Amplifier Applications Complementary to MJL21196 High collector voltage:VCEO=-250V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.)

SPTECH Product SpecificationSPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL packageComplement to type MJL21193Excellent gain linearityAPPLICATIONS Designed for high power audio output,diskhead positioners and linear applicationsPINNINGPIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E

isc Silicon NPN Power Transistor MJL21194DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)High DC Current Gain hFE = 25 Min @ IC = 8 AdcComplement to Type MJL21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPerforated Emitter technologyhigh power audio output, disk head positionerslinear app

Silicon PNP Power Transistor MJL21195DESCRIPTIONExcellent Safe Operating AreaDC Current Gain: h = 20-80@I = -8A,V = -5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output, d

isc Silicon NPN Power Transistor MJL21196DESCRIPTIONExcellent Safe Operating AreaDC Current Gain: h = 20-80@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21195Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output, di