MMBT2222AM3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2222AM3 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.64 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.6 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT-723
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MMBT2222AM3 datasheet
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mmbt2222a-hf.pdf
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mmbt2222a.pdf
R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO
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Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo
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www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em
mmbt2222a.pdf
DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS
mmbt2222 mmbt2222a.pdf
MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector
mmbt2222a-l mmbt2222a-h.pdf
Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte
mmbt2222a.pdf
MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD
mmbt2222a.pdf
MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
mmbt2222a.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm
mmbt2222aq.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead
mmbt2222e mmbt2222ae.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage
mmbt2222a.pdf
MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu
mmbt2222a.pdf
MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren
mmbt2222a.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO -
mmbt2222a.pdf
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S
mmbt2222a.pdf
MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C
mmbt2222a.pdf
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903
Otros transistores... MJW18020, MJW21193, MJW21194, MJW21195, MJW21196, MJW3281A, MMBT2131, MMBT2222AL, A42, MMBT2222AW, MMBT2222L, MMBT2369AL, MMBT2369L, MMBT2484L, MMBT2907AL, MMBT2907AM3T5G, MMBT2907AW
Parámetros del transistor bipolar y su interrelación.
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