MMBT2907AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2907AW
Código: 2F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 0.6 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-70 SOT-323
- Selección de transistores por parámetros
MMBT2907AW Datasheet (PDF)
mmbt2907aw.pdf

MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Complementary NPN Type Available(MMBT2222AW)33 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 11 22K EDCOLLECTORH JF G3M
mmbt2907aw.pdf

MMBT2907AWCOLLECTOR3PNP General Purpose Transistors31BASE122EMITTERSOT-323(SC-70)MAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dissipation
mmbt2907aw.pdf

MMBT2907AWPNP GENERAL PURPOSE SWITCHING TRANSISTORUnit: inch (mm)SOT-323 POWER 225 mWVOLTAGE 60 VoltsFEATURESPNP epitaxial silicon, planar designCollector-emitter voltage VCE = -60V0.087(2.20)0.070(1.80)Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.
mmbt2907awt1rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907AWT1/DPreliminary InformationMMBT2907AWT1General Purpose TransistorPNP SiliconMotorola Preferred DeviceThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT323/SC70 packagewhich is designed for low power surface mount applications.COLLECTOR3311
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: K2104B | KSC900G | Q-00369C | KT8143M | BF883 | 2N3441Y | 2G223
History: K2104B | KSC900G | Q-00369C | KT8143M | BF883 | 2N3441Y | 2G223



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b