Биполярный транзистор MMBT2907AW - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT2907AW
Маркировка: 2F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-70 SOT-323
Аналоги (замена) для MMBT2907AW
MMBT2907AW Datasheet (PDF)
mmbt2907aw.pdf
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MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Complementary NPN Type Available(MMBT2222AW)33 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 11 22K EDCOLLECTORH JF G3M
mmbt2907aw.pdf
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MMBT2907AWCOLLECTOR3PNP General Purpose Transistors31BASE122EMITTERSOT-323(SC-70)MAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dissipation
mmbt2907aw.pdf
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MMBT2907AWPNP GENERAL PURPOSE SWITCHING TRANSISTORUnit: inch (mm)SOT-323 POWER 225 mWVOLTAGE 60 VoltsFEATURESPNP epitaxial silicon, planar designCollector-emitter voltage VCE = -60V0.087(2.20)0.070(1.80)Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.
mmbt2907awt1rev0.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907AWT1/DPreliminary InformationMMBT2907AWT1General Purpose TransistorPNP SiliconMotorola Preferred DeviceThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT323/SC70 packagewhich is designed for low power surface mount applications.COLLECTOR3311
nsvmmbt2907awt1g.pdf
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MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re
mmbt2907awt1g nsvmmbt2907awt1g.pdf
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MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requ
mmbt2907awt1-d.pdf
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MMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symb
mmbt2907awt1g.pdf
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MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re
mmbt2907awt1.pdf
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FM120-M WILLASTHRUMMBT2907AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order t
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