MMBTA06WT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTA06WT1  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SC70 SOT323

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MMBTA06WT1 datasheet

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MMBTA06WT1

MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model -- 4 kV ESD Rating Machine Model -- 400 V http //onsemi.com Features COLLECTOR 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 3 Collector -- Emitter Voltage VCEO 80 Vdc Collector -- Bas

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MMBTA06WT1

MMBTA06WT1G, SMMBTA06WT1G, Driver Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV ESD Rating Machine Model - 400 V Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-70 Site and Control Change Requirements CASE 419 These Devices are Pb-Free, Halogen

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MMBTA06WT1

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.2. Size:273K  panjit
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MMBTA06WT1

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-323 Package Terminals Solderable per MIL-STD-750, Method 2026 Appr

MOSTRAR MÁS

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