MSB1218ART1 Todos los transistores

 6.1. Size:156K  motorola
 msb1218a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSB1218A RT1/D PNP Silicon General Purpose MSB1218A-RT1 Amplifier Transistor MSB1218A-ST1 This PNP Silicon Epitaxial Planar Transistor is designed for general purpose Motorola Preferred Devices amplifier applications. This device is housed in the SC 70/SOT 323 package which is designed for low power surface mount appl

 6.2. Size:117K  onsemi
 msb1218a-rt1-d.pdf

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 6.3. Size:201K  onsemi
 msb1218a rt1g.pdf

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 6.4. Size:119K  onsemi
 msb1218a-rt1.pdf

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),

 6.5. Size:119K  onsemi
 msb1218a-rt1g.pdf

MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface http //onsemi.com mount applications. COLLECTOR Features 3 High hFE, 210 -- 460 Low VCE(sat),