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MSB1218ART1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSB1218ART1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 45 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SC70 SOT323
 

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MSB1218ART1 Datasheet (PDF)

 6.1. Size:156K  motorola
 msb1218a.pdf pdf_icon

MSB1218ART1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB1218ART1/DPNP Silicon General PurposeMSB1218A-RT1Amplifier TransistorMSB1218A-ST1This PNP Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC70/SOT323 packagewhich is designed for low power surface mount appl

 6.2. Size:117K  onsemi
 msb1218a-rt1-d.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 6.3. Size:201K  onsemi
 msb1218a rt1g.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 6.4. Size:119K  onsemi
 msb1218a-rt1.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: D62T3575 | 2N5691

 

 
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