Справочник транзисторов. MSB1218ART1

 

Биполярный транзистор MSB1218ART1 Даташит. Аналоги


   Наименование производителя: MSB1218ART1
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Статический коэффициент передачи тока (hfe): 210
   Корпус транзистора: SC70 SOT323
     - подбор биполярного транзистора по параметрам

 

MSB1218ART1 Datasheet (PDF)

 6.1. Size:156K  motorola
 msb1218a.pdf pdf_icon

MSB1218ART1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB1218ART1/DPNP Silicon General PurposeMSB1218A-RT1Amplifier TransistorMSB1218A-ST1This PNP Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC70/SOT323 packagewhich is designed for low power surface mount appl

 6.2. Size:117K  onsemi
 msb1218a-rt1-d.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 6.3. Size:201K  onsemi
 msb1218a rt1g.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

 6.4. Size:119K  onsemi
 msb1218a-rt1.pdf pdf_icon

MSB1218ART1

MSB1218A--RT1GPNP Silicon GeneralPurpose AmplifierTransistorThis PNP Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC--70/SOT--323 package which is designed for low power surfacehttp://onsemi.commount applications.COLLECTORFeatures3 High hFE, 210 -- 460 Low VCE(sat),

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History: SBC328 | 2SC1757E | 2SC1727 | D43C8 | D42T4 | CPH5520 | MP4051

 

 
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