MSB709RT1 Todos los transistores

 

MSB709RT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSB709RT1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 45 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SC59
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MSB709RT1 Datasheet (PDF)

 8.1. Size:111K  motorola
 msb709-r.pdf pdf_icon

MSB709RT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB709RT1/DPNP General Purpose AmplifierMSB709-RT1Transistor Surface MountMotorola Preferred DeviceCOLLECTOR33212 1BASE EMITTERCASE 318D03, STYLE 1MAXIMUM RATINGS (TA = 25C)SC59Rating Symbol Value UnitCollectorBase Voltage V(BR)CBO 60 VdcCollectorEmitter Voltage V(BR)CEO 45 V

 8.2. Size:42K  onsemi
 msb709-rt1-d.pdf pdf_icon

MSB709RT1

MSB709-RT1Preferred Device PNP General PurposeAmplifier TransistorSurface MountFeatureshttp://onsemi.com Pb-Free Package is AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO -60 Vdc2 1Collector - Emitter Voltage V(BR)CEO -45 VdcBASE EMITTEREmitter - Base Voltage V(BR)EBO -7.0 VdcCollector Current - Conti

 8.3. Size:422K  wietron
 msb709.pdf pdf_icon

MSB709RT1

MSB709PNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO-45 VVCBOCollector-Base Voltage -60 VVEBOEmitter-Base Voltage -7.0 VICCollector Current - Continuous -100 mAIC(P)Collector Current - Peak -200 mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temper

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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