MSB709RT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSB709RT1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 45 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 210

Encapsulados: SC59

 Búsqueda de reemplazo de MSB709RT1

- Selecciónⓘ de transistores por parámetros

 

MSB709RT1 datasheet

 8.1. Size:111K  motorola
 msb709-r.pdf pdf_icon

MSB709RT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSB709 RT1/D PNP General Purpose Amplifier MSB709-RT1 Transistor Surface Mount Motorola Preferred Device COLLECTOR 3 3 2 1 2 1 BASE EMITTER CASE 318D 03, STYLE 1 MAXIMUM RATINGS (TA = 25 C) SC 59 Rating Symbol Value Unit Collector Base Voltage V(BR)CBO 60 Vdc Collector Emitter Voltage V(BR)CEO 45 V

 8.2. Size:42K  onsemi
 msb709-rt1-d.pdf pdf_icon

MSB709RT1

MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO -60 Vdc 2 1 Collector - Emitter Voltage V(BR)CEO -45 Vdc BASE EMITTER Emitter - Base Voltage V(BR)EBO -7.0 Vdc Collector Current - Conti

 8.3. Size:422K  wietron
 msb709.pdf pdf_icon

MSB709RT1

MSB709 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current - Continuous -100 mA IC(P) Collector Current - Peak -200 mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temper

Otros transistores... MMUN2216L, MMUN2231L, MMUN2232L, MMUN2233L, MMUN2234L, MMUN2238L, MSA1162, MSB1218ART1, NJW0281G, MSB92, MSB92A, MSB92AW, MSB92W, MSC2712GT1, MSD1328RT1, MSD1819AR, MSD42SW