MUN5211 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MUN5211 SeriesNPN Silicon Bias Resistor Transistor3R1P b Lead(Pb)-Free1R22SOT-323(SC-70)( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Bo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5211T1/DBias Resistor TransistorMUN5211T1NPN Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single deviceand its external resistor bias network. The BRT (Bias Resistor Transistor)contains a sing

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5211DW1T1/DMUN5211DW1T1Dual Bias Resistor TransistorsSERIESNPN Silicon Surface Mount Transistors withMonolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor and aba

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The

MUN5211T1G Series,SMUN5211T1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias networkconsis

MUN5211T1G SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba

MUN5211DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors are(3) (2) (1)desi

MUN5211DW SeriesSurface Mount Dual Bias Resistor Transistor6 5 465NPN Silicon4R1R2Q21P b Lead(Pb)-Free2R Q123R1SOT-363(SC-88)1 2 3NPN+NPNMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 50 VdcCEOCollector-Base Voltage VCBO 50 VdcCollector Current IC 100 mAdcThermal CharacteristicsCharacteristics(1) Symbol Max Unit(2

LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r