MUN5214DW1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5214DW1  📄📄 

Código: 7D

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC88 SC70 SOT363

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MUN5214DW1 datasheet

 0.1. Size:90K  onsemi
 nsvmun5214dw1t3g.pdf pdf_icon

MUN5214DW1

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 0.2. Size:191K  onsemi
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MUN5214DW1

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The

 0.3. Size:207K  lrc
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MUN5214DW1

LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor

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