NJD1718 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJD1718

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: DPAK

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NJD1718 datasheet

 ..1. Size:217K  inchange semiconductor
 njd1718.pdf pdf_icon

NJD1718

isc Silicon PNP Power Transistor NJD1718 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= -0.5V(Max)( I = -1A; I = -0.05A) CE(sat C B High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 0.1. Size:112K  onsemi
 njd1718t4g.pdf pdf_icon

NJD1718

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl

 0.2. Size:112K  onsemi
 njvnjd1718t4g.pdf pdf_icon

NJD1718

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl

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