NJD1718 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NJD1718
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de transistor bipolar NJD1718

NJD1718 Datasheet (PDF)

..1. Size:217K inchange semiconductor
njd1718.pdf

isc Silicon PNP Power Transistor NJD1718DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.5V(Max)( I = -1A; I = -0.05A)CE(sat C BHigh Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

0.1. Size:112K onsemi
njd1718t4g.pdf

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

0.2. Size:112K onsemi
njvnjd1718t4g.pdf