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NJD1718 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJD1718
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: DPAK
 

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NJD1718 Datasheet (PDF)

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NJD1718

isc Silicon PNP Power Transistor NJD1718DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.5V(Max)( I = -1A; I = -0.05A)CE(sat C BHigh Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 0.1. Size:112K  onsemi
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NJD1718

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

 0.2. Size:112K  onsemi
 njvnjd1718t4g.pdf pdf_icon

NJD1718

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

Otros transistores... MUN5314DW1 , MUN5315DW1 , MUN5316DW1 , MUN5330DW1 , MUN5332DW1 , MUN5333DW1 , MUN5334DW1 , MUN5335DW1 , 8050 , NJD2873 , NJD35N04 , NJL0281D , NJL0302D , NJL1302D , NJL3281D , NJL4281D , NJL4302D .

History: 2SD1246U | 2N955A | NSS1C200L | 3DD164F | BFR36 | CSC2371M | UN121K

 

 
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