NJD1718 Specs and Replacement
Type Designator: NJD1718
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 2 A
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: DPAK
NJD1718 Substitution
- BJT ⓘ Cross-Reference Search
NJD1718 datasheet
isc Silicon PNP Power Transistor NJD1718 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= -0.5V(Max)( I = -1A; I = -0.05A) CE(sat C B High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl... See More ⇒
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl... See More ⇒
Detailed specifications: MUN5314DW1, MUN5315DW1, MUN5316DW1, MUN5330DW1, MUN5332DW1, MUN5333DW1, MUN5334DW1, MUN5335DW1, BC546, NJD2873, NJD35N04, NJL0281D, NJL0302D, NJL1302D, NJL3281D, NJL4281D, NJL4302D
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