NJD2873 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJD2873
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 65 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: DPAK
Búsqueda de reemplazo de NJD2873
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NJD2873 datasheet
njd2873.pdf
NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier applications. www.onsemi.com Features High DC Current Gain SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Current-Gain - Bandwidth Product 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Othe
njd2873.pdf
isc Silicon NPN Power Transistor NJD2873 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= 0.3V(Max)( I = 1A; I = 50mA) CE(sat C B DC Current Gain -h = 120(Min)@ I = 0.5A FE C High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-gain audio amplifier applications. A
njd2873t4g.pdf
NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N
njvnjd2873t4g.pdf
NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N
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History: KT8164A | 2SC806A
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