NJD2873 Todos los transistores

 

NJD2873 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJD2873
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 65 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de transistor bipolar NJD2873

 

NJD2873 Datasheet (PDF)

 ..1. Size:66K  onsemi
njd2873.pdf

NJD2873 NJD2873

NJD2873Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.www.onsemi.comFeatures High DC Current Gain SILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Current-Gain - Bandwidth Product2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Othe

 ..2. Size:215K  inchange semiconductor
njd2873.pdf

NJD2873 NJD2873

isc Silicon NPN Power Transistor NJD2873DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.3V(Max)( I = 1A; I = 50mA)CE(sat C BDC Current Gain -h = 120(Min)@ I = 0.5AFE CHigh Current-GainBandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier applications.A

 0.1. Size:108K  onsemi
njd2873t4g.pdf

NJD2873 NJD2873

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

 0.2. Size:108K  onsemi
njvnjd2873t4g.pdf

NJD2873 NJD2873

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

 0.3. Size:93K  onsemi
njd2873t4.pdf

NJD2873 NJD2873

NJD2873T4GPlastic Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.http://onsemi.comFeatures High DC Current Gain - SILICONhFE = 120 (Min) @ IC = 500 mAPOWER TRANSISTORS= 40 (Min) @ IC = 2 A2 AMPERES Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A50 VOLTS High

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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