NJD2873 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NJD2873Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.www.onsemi.comFeatures High DC Current Gain SILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Current-Gain - Bandwidth Product2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Othe

isc Silicon NPN Power Transistor NJD2873DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.3V(Max)( I = 1A; I = 50mA)CE(sat C BDC Current Gain -h = 120(Min)@ I = 0.5AFE CHigh Current-GainBandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier applications.A

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

NJD2873T4GPlastic Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.http://onsemi.comFeatures High DC Current Gain - SILICONhFE = 120 (Min) @ IC = 500 mAPOWER TRANSISTORS= 40 (Min) @ IC = 2 A2 AMPERES Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A50 VOLTS High