NJD2873 - Даташиты. Аналоги. Основные параметры

NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier applications. www.onsemi.com Features High DC Current Gain SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Current-Gain - Bandwidth Product 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Othe

isc Silicon NPN Power Transistor NJD2873 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= 0.3V(Max)( I = 1A; I = 50mA) CE(sat C B DC Current Gain -h = 120(Min)@ I = 0.5A FE C High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-gain audio amplifier applications. A

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N

NJD2873T4G Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier applications. http //onsemi.com Features High DC Current Gain - SILICON hFE = 120 (Min) @ IC = 500 mA POWER TRANSISTORS = 40 (Min) @ IC = 2 A 2 AMPERES Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A 50 VOLTS High