2N5590 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N5590
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 175 MHz
   Capacitancia de salida (Cc): 70 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO128

Búsqueda de reemplazo de transistor bipolar 2N5590

2N5590 Datasheet (PDF)

9.1. Size:10K semelab
2n5599.pdf

2N5599Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

9.2. Size:11K semelab
2n5597.pdf

2N5597Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

9.3. Size:117K jmnic
2n5598 2n5600 2n5602 2n5604.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

9.4. Size:120K jmnic
2n5597 2n5599 2n5601 2n5603.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

9.5. Size:127K inchange semiconductor
2n5598 2n5600 2n5602 2n5604.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66

9.6. Size:127K inchange semiconductor
2n5597 2n5599 2n5601 2n5603.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66

Otros transistores... 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 , 2N5589 , 2N559 , 2N2907 , 2N5591 , 2N5595 , 2N5596 , 2N5597 , 2N5598 , 2N5599 , 2N56 , 2N560 .

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