Биполярный транзистор 2N5590 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5590
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO128
2N5590 Datasheet (PDF)
2n5599.pdf
2N5599Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
2n5597.pdf
2N5597Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
2n5598 2n5600 2n5602 2n5604.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou
2n5597 2n5599 2n5601 2n5603.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou
2n5598 2n5600 2n5602 2n5604.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66
2n5597 2n5599 2n5601 2n5603.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050