NSS12100XV6T1G Todos los transistores

 

NSS12100XV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS12100XV6T1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.65 W
   Tensión colector-emisor (Vce): 12 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT563
 

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NSS12100XV6T1G Datasheet (PDF)

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NSS12100XV6T1G

NSS12100XV6T1GLow VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPSwhere

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NSS12100XV6T1G

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:63K  onsemi
nss12100uw3tcg.pdf pdf_icon

NSS12100XV6T1G

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.2. Size:82K  onsemi
nss12100m3t5g.pdf pdf_icon

NSS12100XV6T1G

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

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