NSS12100XV6T1G. Аналоги и основные параметры

Наименование производителя: NSS12100XV6T1G

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.65 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V

Макcимальный постоянный ток коллектора (Ic): 2 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Статический коэффициент передачи тока (hFE): 150

Корпус транзистора: SOT563

 Аналоги (замена) для NSS12100XV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSS12100XV6T1G даташит

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NSS12100XV6T1G

NSS12100XV6T1G Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPS where

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NSS12100XV6T1G

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

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NSS12100XV6T1G

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.2. Size:82K  onsemi
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NSS12100XV6T1G

NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSB4904DW1, NSB9435, NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G, NSS12100UW, 2SC5198, NSS12200L, NSS12200WT1G, NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L