NSS12200WT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS12200WT1G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-emisor (Vce): 12 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 100
Encapsulados: SC88 SC70 SOT363
Búsqueda de reemplazo de NSS12200WT1G
- Selecciónⓘ de transistores por parámetros
NSS12200WT1G datasheet
nss12200wt1g.pdf
NSS12200WT1G Low VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS where affordable e
nss12200w.pdf
NSS12200WT1G 12 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important
nss12200lt1g.pdf
NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss12200l.pdf
NSS12200L 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com T
Otros transistores... NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G, NSS12100UW, NSS12100XV6T1G, NSS12200L, D965, NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet




