Справочник транзисторов. NSS12200WT1G

 

Биполярный транзистор NSS12200WT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSS12200WT1G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.45 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SC88 SC70 SOT363

 Аналоги (замена) для NSS12200WT1G

 

 

NSS12200WT1G Datasheet (PDF)

 ..1. Size:179K  onsemi
nss12200wt1g.pdf

NSS12200WT1G
NSS12200WT1G

NSS12200WT1GLow VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTSwhere affordable e

 5.1. Size:105K  onsemi
nss12200w.pdf

NSS12200WT1G
NSS12200WT1G

NSS12200WT1G12 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important

 6.1. Size:122K  onsemi
nss12200lt1g.pdf

NSS12200WT1G
NSS12200WT1G

NSS12200LT1G12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 6.2. Size:192K  onsemi
nss12200l.pdf

NSS12200WT1G
NSS12200WT1G

NSS12200L12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.www.onsemi.comT

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History: BUS13-7 | QM5HG-24 | KSE45H8 | KSD2012G

 

 
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