NSS12200WT1G datasheet, аналоги, основные параметры

Наименование производителя: NSS12200WT1G  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.45 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SC88 SC70 SOT363

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NSS12200WT1G даташит

 ..1. Size:179K  onsemi
 nss12200wt1g.pdf pdf_icon

NSS12200WT1G

NSS12200WT1G Low VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS where affordable e

 5.1. Size:105K  onsemi
 nss12200w.pdf pdf_icon

NSS12200WT1G

NSS12200WT1G 12 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important

 6.1. Size:122K  onsemi
 nss12200lt1g.pdf pdf_icon

NSS12200WT1G

NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 6.2. Size:192K  onsemi
 nss12200l.pdf pdf_icon

NSS12200WT1G

NSS12200L 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com T

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