NSS12501UW3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS12501UW3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5
W
Tensión colector-emisor (Vce): 12
V
Corriente del colector DC máxima (Ic): 7
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: WDFN
Búsqueda de reemplazo de transistor bipolar NSS12501UW3
NSS12501UW3
Datasheet (PDF)
0.1. Size:82K onsemi
nss12501uw3-d.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
0.2. Size:138K onsemi
nss12501uw3t2g.pdf
NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.1. Size:108K onsemi
nss12500uw3.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
7.2. Size:108K onsemi
nss12500uw3t2g.pdf
NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
Otros transistores... 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, BD777
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.