Справочник транзисторов. NSS12501UW3

 

Биполярный транзистор NSS12501UW3 Даташит. Аналоги


   Наименование производителя: NSS12501UW3
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: WDFN
 

 Аналог (замена) для NSS12501UW3

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NSS12501UW3 Datasheet (PDF)

 0.1. Size:82K  onsemi
nss12501uw3-d.pdfpdf_icon

NSS12501UW3

NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 0.2. Size:138K  onsemi
nss12501uw3t2g.pdfpdf_icon

NSS12501UW3

NSS12501UW3T2G12 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 7.1. Size:108K  onsemi
nss12500uw3.pdfpdf_icon

NSS12501UW3

NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 7.2. Size:108K  onsemi
nss12500uw3t2g.pdfpdf_icon

NSS12501UW3

NSS12500UW3T2G12 V, 8.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

Другие транзисторы... NSM80101M , NSS12100M3T5G , NSS12100UW , NSS12100XV6T1G , NSS12200L , NSS12200WT1G , NSS12201L , NSS12500UW3 , 2222A , NSS12601CF8 , NSS1C200 , NSS1C200L , NSS1C201LT1G , NSS1C201MZ4T1G , NSS20101JT1G , NSS20200L , NSS20201L .

History: 2SC1847 | KRC855E

 

 
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