NSS1C200L Todos los transistores

 

NSS1C200L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS1C200L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.71 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar NSS1C200L

 

NSS1C200L Datasheet (PDF)

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NSS1C200L

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

 0.1. Size:124K  onsemi
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NSS1C200L

NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is import

 0.2. Size:896K  kexin
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NSS1C200L

SMD Type Transistors PNP Transistors NSS1C200LT1G (KSS1C200LT1G) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 COLLECTOR 1.9+0.1 -0.1 1.Base BASE 2.Emitter 3.collector EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating U

 6.1. Size:198K  onsemi
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NSS1C200L

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef

Otros transistores... NSS12100XV6T1G , NSS12200L , NSS12200WT1G , NSS12201L , NSS12500UW3 , NSS12501UW3 , NSS12601CF8 , NSS1C200 , BC556 , NSS1C201LT1G , NSS1C201MZ4T1G , NSS20101JT1G , NSS20200L , NSS20201L , NSS20201MR6T1G , NSS20300MR6T1G , NSS20500UW3 .

History: 2SA562-O | NSDU10 | CHT857BTPTR | CHDTC124TEGP | CIL238 | 2SC4621 | NSBC114YPDP6T5G

 

 
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