NSS20201L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS20201L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.54 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 4 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
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NSS20201L Datasheet (PDF)
nss20201lt1g.pdf

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T
nss20201l-d.pdf

NSS20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss20201lt1g nsv20201lt1g.pdf

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRAN
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ET6060 | DTC143ZET1G | S637T | 2SD1032 | BFQ268 | 2SD1917 | NB323M
History: ET6060 | DTC143ZET1G | S637T | 2SD1032 | BFQ268 | 2SD1917 | NB323M



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