NSS20201L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS20201L  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.54 W

Tensión colector-emisor (Vce): 20 V

Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT23

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NSS20201L datasheet

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NSS20201L

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T

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NSS20201L

NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.3. Size:189K  onsemi
 nss20201lt1g nsv20201lt1g.pdf pdf_icon

NSS20201L

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN

MOSTRAR MÁS

Otros transistores... NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, NSS20200L, TIP142, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G, NSS30100LT1G