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NSS20201L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20201L
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar NSS20201L

 

NSS20201L Datasheet (PDF)

 0.1. Size:119K  onsemi
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NSS20201L

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T

 0.2. Size:125K  onsemi
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NSS20201L

NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.3. Size:189K  onsemi
nss20201lt1g nsv20201lt1g.pdf pdf_icon

NSS20201L

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN

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History: MPS2714 | INC5006AC1 | 2SC4630LS | 2SC4808 | 2SC4774 | NSS12201L | ISA1287AS1

 

 
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