NSS20201MR6T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS20201MR6T1G 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.75 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 300
Encapsulados: TSOP-6
📄📄 Copiar
Búsqueda de reemplazo de NSS20201MR6T1G
- Selecciónⓘ de transistores por parámetros
NSS20201MR6T1G datasheet
nss20201mr6t1g.pdf
NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss20201mr6.pdf
NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T
nss20201l-d.pdf
NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
Otros transistores... NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, NSS20200L, NSS20201L, 2N2907, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G
Parámetros del transistor bipolar y su interrelación.
History: NSS1C201MZ4T1G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet | irf530 | 2n3565 | irf530n | pn2222a datasheet





