NSS20201MR6T1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS20201MR6T1G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.75
W
Tensión colector-emisor (Vce): 20
V
Corriente del colector DC máxima (Ic): 3
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
TSOP-6
Búsqueda de reemplazo de transistor bipolar NSS20201MR6T1G
NSS20201MR6T1G
Datasheet (PDF)
..1. Size:118K onsemi
nss20201mr6t1g.pdf 
NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
3.1. Size:47K onsemi
nss20201mr6.pdf
NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
6.1. Size:119K onsemi
nss20201lt1g.pdf
NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T
6.2. Size:125K onsemi
nss20201l-d.pdf
NSS20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
6.3. Size:189K onsemi
nss20201lt1g nsv20201lt1g.pdf
NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRAN
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