Справочник транзисторов. NSS20201MR6T1G

 

Биполярный транзистор NSS20201MR6T1G Даташит. Аналоги


   Наименование производителя: NSS20201MR6T1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.75 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: TSOP-6
 

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NSS20201MR6T1G Datasheet (PDF)

 ..1. Size:118K  onsemi
nss20201mr6t1g.pdfpdf_icon

NSS20201MR6T1G

NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 3.1. Size:47K  onsemi
nss20201mr6.pdfpdf_icon

NSS20201MR6T1G

NSS20201MR6T1G20 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:119K  onsemi
nss20201lt1g.pdfpdf_icon

NSS20201MR6T1G

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T

 6.2. Size:125K  onsemi
nss20201l-d.pdfpdf_icon

NSS20201MR6T1G

NSS20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

Другие транзисторы... NSS12601CF8 , NSS1C200 , NSS1C200L , NSS1C201LT1G , NSS1C201MZ4T1G , NSS20101JT1G , NSS20200L , NSS20201L , 2SC2482 , NSS20300MR6T1G , NSS20500UW3 , NSS20501UW3 , NSS20601CF8 , NSS30070MR6T1G , NSS30071MR6T1G , NSS30100LT1G , NSS30101LT1G .

History: 2SD335 | FZT749 | OC306-2

 

 
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