NSS30071MR6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSS30071MR6T1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.665 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.7 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SC-74 SC59-ML

Búsqueda de reemplazo de transistor bipolar NSS30071MR6T1G

NSS30071MR6T1G Datasheet (PDF)

..1. Size:150K onsemi
nss30071mr6t1g.pdf

NSS30071MR6T1G30 V, 0.7 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

7.1. Size:64K onsemi
nss30070mr6t1g.pdf

NSS30070MR6T1G30 V, 0.7 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

9.1. Size:65K onsemi
nss30201mr6t1g.pdf

NSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

9.2. Size:204K onsemi
nss30201mr6t1g snss30201mr6t1g.pdf

NSS30201MR6T1G,SNSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications 30 VOLTSwhere affordable efficien

9.3. Size:107K onsemi
nss30100lt1g.pdf

NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3999SM

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