NSS30100LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS30100LT1G  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.71 W

Tensión colector-emisor (Vce): 30 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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NSS30100LT1G datasheet

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NSS30100LT1G

NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important.

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 nss30071mr6t1g.pdf pdf_icon

NSS30100LT1G

NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

 9.2. Size:65K  onsemi
 nss30201mr6t1g.pdf pdf_icon

NSS30100LT1G

NSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 9.3. Size:204K  onsemi
 nss30201mr6t1g snss30201mr6t1g.pdf pdf_icon

NSS30100LT1G

NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 30 VOLTS where affordable efficien

MOSTRAR MÁS

Otros transistores... NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G, D882P, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, NSS35200MR6T1G, NSS40200L, NSS40200UW6T1G, NSS40201L, NSS40300