NSS30100LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSS30100LT1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.71 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar NSS30100LT1G

NSS30100LT1G Datasheet (PDF)

..1. Size:107K onsemi
nss30100lt1g.pdf

NSS30100LT1G30 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is important.

9.1. Size:150K onsemi
nss30071mr6t1g.pdf

NSS30071MR6T1G30 V, 0.7 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

9.2. Size:65K onsemi
nss30201mr6t1g.pdf

NSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

9.3. Size:204K onsemi
nss30201mr6t1g snss30201mr6t1g.pdf

NSS30201MR6T1G,SNSS30201MR6T1G30 V, 3 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications 30 VOLTSwhere affordable efficien

9.4. Size:64K onsemi
nss30070mr6t1g.pdf

NSS30070MR6T1G30 V, 0.7 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BFV26 | 38388

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