NSS40601CF8 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS40601CF8

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.4 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: CHIPFET-8

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NSS40601CF8 datasheet

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NSS40601CF8

NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 0.2. Size:161K  onsemi
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NSS40601CF8

NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 7.1. Size:128K  onsemi
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NSS40601CF8

NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

 7.2. Size:103K  onsemi
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NSS40601CF8

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(

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