Справочник транзисторов. NSS40601CF8

 

Биполярный транзистор NSS40601CF8 Даташит. Аналоги


   Наименование производителя: NSS40601CF8
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.4 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: CHIPFET-8
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NSS40601CF8 Datasheet (PDF)

 0.1. Size:88K  onsemi
 nss40601cf8-d.pdf pdf_icon

NSS40601CF8

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 0.2. Size:161K  onsemi
 nss40601cf8t1g.pdf pdf_icon

NSS40601CF8

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 7.1. Size:128K  onsemi
 nss40600cf8-d.pdf pdf_icon

NSS40601CF8

NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 7.2. Size:103K  onsemi
 nss40600cf8t1g.pdf pdf_icon

NSS40601CF8

NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(

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