NST3904F3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NST3904F3T5G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-1123
Búsqueda de reemplazo de transistor bipolar NST3904F3T5G
NST3904F3T5G Datasheet (PDF)
nst3904f3t5g.pdf
DATA SHEETwww.onsemi.comNPN General PurposeCOLLECTOR3Transistor1NST3904F3T5GBASEThe NST3904F3T5G device is a spin-off of our popular2SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isEMITTERdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where
lnst3904f3t5g.pdf
LESHAN RADIO COMPANY, LTD.NPN General PurposeTransistorLNST3904F3T5GThe LNST3904F3T5G device is a spin-off of our popularS-LNST3904F3T5GSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forCOLLECTORlow-power surface mount applications where boar
nst3904f3.pdf
NST3904F3T5GNPN General PurposeTransistorThe NST3904F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst3904dp6.pdf
NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf
Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide
nst3904dxv6t1-5.pdf
NST3904DXV6T1,NST3904DXV6T5Dual General PurposeTransistorThe NST3904DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power su
nst3904dxv6t.pdf
NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag
nst3904mx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose Transistor3NPN Silicon1BASENST3904MX22EMITTERFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGS2X2DFN3 (1.0 x 0.6 mm)Rating Symbol Value UnitCASE 714ACCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 V
nst3904dp6t5g.pdf
NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
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