NST3906DXV6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NST3906DXV6

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.357 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT563

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NST3906DXV6 datasheet

 0.1. Size:172K  onsemi
nst3906dxv6t1 nst3906dxv6t5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 0.2. Size:96K  onsemi
nst3906dxv6t1-5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 0.3. Size:96K  onsemi
nst3906dxv6t1g.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

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