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NST3906DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NST3906DXV6
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.357 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 0.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT563
 

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NST3906DXV6 Datasheet (PDF)

 0.1. Size:172K  onsemi
nst3906dxv6t1 nst3906dxv6t5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.2. Size:96K  onsemi
nst3906dxv6t1-5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.3. Size:96K  onsemi
nst3906dxv6t1g.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

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History: 3DG5088 | 2SC1345 | 2SD1131 | 2SB1161 | 2N3225 | NSBC123EDXV6T1G | 2SD1714

 

 
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