NST3906DXV6 - Даташиты. Аналоги. Основные параметры
Наименование производителя: NST3906DXV6
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.357 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT563
Аналоги (замена) для NST3906DXV6
NST3906DXV6 Datasheet (PDF)
nst3906dxv6t1 nst3906dxv6t5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
nst3906dxv6t1-5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
nst3906dxv6t1g.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
Другие транзисторы... NSS60201LT1G , NSS60600 , NSS60601MZ4 , NST30010MXV6 , NST3904DP6 , NST3904DXV6 , NST3904F3T5G , NST3906DP6 , A1015 , NST3906F3T5G , NST3946DP6 , NST3946DXV6 , NST45010 , NST45011MW6T1G , NST489 , NST846BF3T5G , NST847BDP6 .
History: IMH10A | NSP596 | FMMT4355
History: IMH10A | NSP596 | FMMT4355
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