Справочник транзисторов. NST3906DXV6

 

Биполярный транзистор NST3906DXV6 Даташит. Аналоги


   Наименование производителя: NST3906DXV6
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.357 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT563
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NST3906DXV6 Datasheet (PDF)

 0.1. Size:172K  onsemi
 nst3906dxv6t1 nst3906dxv6t5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.2. Size:96K  onsemi
 nst3906dxv6t1-5.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.3. Size:96K  onsemi
 nst3906dxv6t1g.pdf pdf_icon

NST3906DXV6

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

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History: 2SB1204 | BDX83C

 

 
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