NST3906F3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NST3906F3T5G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-1123
Búsqueda de reemplazo de transistor bipolar NST3906F3T5G
NST3906F3T5G Datasheet (PDF)
nst3906f3t5g.pdf
NST3906F3T5GPNP General PurposeTransistorThe NST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
lnst3906f3t5g.pdf
LESHAN RADIO COMPANY, LTD.PNP General PurposeTransistorLNST3906F3T5GS-LNST3906F3T5GTheLNST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inCOLLECTORthe SOT-1123 surface mount package. This device is ideal for3low-power surface mount applications where bo
nst3906dxv6t1 nst3906dxv6t5.pdf
NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906dxv6t1-5.pdf
NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906dxv6t1g.pdf
NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906dp6.pdf
NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3906dp6t5g.pdf
NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3906mx2.pdf
DATA SHEETwww.onsemi.comGeneral Purpose Transistor COLLECTOR3PNP Silicon1NST3906MX2BASEFeatures2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSEMITTERCompliant3MAXIMUM RATINGS1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO -40 VdcX2DFN3 (1.0 x 0.6 mm)CASE 714ACCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
