Биполярный транзистор NST3906F3T5G Даташит. Аналоги
Наименование производителя: NST3906F3T5G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-1123
Аналог (замена) для NST3906F3T5G
NST3906F3T5G Datasheet (PDF)
nst3906f3t5g.pdf

NST3906F3T5GPNP General PurposeTransistorThe NST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
lnst3906f3t5g.pdf

LESHAN RADIO COMPANY, LTD.PNP General PurposeTransistorLNST3906F3T5GS-LNST3906F3T5GTheLNST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inCOLLECTORthe SOT-1123 surface mount package. This device is ideal for3low-power surface mount applications where bo
nst3906dxv6t1 nst3906dxv6t5.pdf

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906dxv6t1-5.pdf

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
Другие транзисторы... NSS60600 , NSS60601MZ4 , NST30010MXV6 , NST3904DP6 , NST3904DXV6 , NST3904F3T5G , NST3906DP6 , NST3906DXV6 , 2N3906 , NST3946DP6 , NST3946DXV6 , NST45010 , NST45011MW6T1G , NST489 , NST846BF3T5G , NST847BDP6 , NST847BF3T5G .
History: KT370B-9
History: KT370B-9



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